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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION *DC Current Gain -hFE = 25(Min)@ IC= 1.0A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C *Complement to Type BDT32/A/B/C APPLICATIONS *Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BDT31 BDT 31A VCBO Collector-Base Voltage BDT 31B BDT 31C BDT31 BDT 31A VCEO Collector-Emitter Voltage BDT 31B BDT 31C VEBO IC ICM IB B BDT31/A/B/C VALUE 80 100 UNIT V 120 140 40 60 V 80 100 5 3 5 1 40 150 -65~150 V A A A W Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25 Junction Temperature Storage Ttemperature Range PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 3.12 70 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER BDT31 BDT 31A IC= 30mA; IB= 0 BDT 31B BDT 31C VCE(sat) VBE(on) ICES Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current BDT31/A ICEO Collector Cutoff Current BDT31B/C IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product VCE= 60V; IB= 0 B BDT31/A/B/C CONDITIONS MIN 40 60 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 80 100 IC= 3A; IB= 0.375A B 1.2 1.8 0.2 V V mA IC= 3A ; VCE= 4V VCE= VCEOmax; VBE= 0 VCE= 30V; IB= 0 B 0.1 mA VEB= 5V; IC= 0 IC= 1A ; VCE= 4V IC= 3A ; VCE= 4V IC= 0.5A ; VCE= 10V 25 10 3 0.2 mA 50 MHz Switching Times ton toff Turn-On Time IC= 1.0A; IB1= -IB2= 0.1A Turn-Off Time 1.0 s 0.3 s isc Websitewww.iscsemi.cn |
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